ktc3197 0.05a , 30v npn plastic-encapsulated transistor elektronische bauelemente 26-dec-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features high gain: gpe=33db(typ.) (f=45mhz) good linearity of h fe absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 25 v emitter to base voltage v ebo 4 v collector current - continuous i c 50 ma collector power dissipation p c 625 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 30 - - v i c =1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 25 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 4 - - v i e =1ma, i c =0 collector cut C off current i cbo - - 0.1 a v cb =30v, i e =0 emitter cut C off current i ebo - - 0.1 a v eb =3v, i c =0 dc current gain h fe 20 - 200 v ce =12.5v, i c =12.5ma collector to emitter saturation voltage v ce(sat) - - 0.2 v i c =15ma, i b =1.5ma base to emitter saturation voltage v be(sat) - - 1.5 v i c =15ma, i b =1.5ma collector output capacitance c ob 0.8 - 2 pf v cb =10v, i e =0, f=1mhz collector-base time constant c c ? r bb - - 25 ps v cb =10v, i e = -1ma, f=30mhz transition frequency f t 300 - - mhz v ce =12.5v, i c =12.5ma power gain gpe 28 - 36 db v ce =12.5v, i e =12.5ma, f=45mhz ref. millimeter ref. millimeter min. max. min. max. a 4.40 4.70 f 0.30 0.51 b 4.30 4.70 g 1.27 typ. c 12.70 - h 1. 10 1.40 d 3.30 3.81 j 2.42 2.66 e 0.36 0.56 k 0.36 0.76 1 11 1 emitter 2 22 2 collector 3 33 3 base to - 92 3 base 1 emitter collector 2
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